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Study of oxide film with the hard X-ray photoelectron spectroscopy

Kobata, Masaaki  ; Kobayashi, Keisuke*

We report the applications of a hard X-ray photoelectron spectroscopy to the characterization of SiO$$_{2}$$/Si(001)systems. Large escape depth of high-energy photoelectron enables us to probe buried layers and their interfaces in multilayer structures. Estimation of SiO$$_{2}$$ overlayer thicknesses up to 25 nm by angle resolved XPS was possible in SiO$$_{2}$$/Si(001) samples. Determination of the thickness profile of a wedged shape SiO$$_{2}$$ buried layer was successfully done in Ir (8 nm)/HfO$$_{2}$$ (2.2 nm)/thickness graded-SiO$$_{2}$$ (0-10 nm) / Si (100). The Si 1s core level showed a SiO$$_{2}$$ thickness dependent shift, which was ascribed to fixed charge at the SiO$$_{2}$$-Si interface. Energy distribution of interface states at ultrathin thermal oxide/Si(100) interfaces were determined by Si 1${it s}$ core level shift by applying gate bias in metal-oxide-semiconductor (MOS) structure with 5 nm Au gate electrodes.

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