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Excited states above the proton threshold in $$^{26}$$Si

Komatsubara, Tetsuro*; Kubono, Shigeru*; Hayakawa, Takehito; Shizuma, Toshiyuki; Osawa, Akira*; Ito, Yuta*; Ishibashi, Yoko*; Moriguchi, Tetsuro*; Yamaguchi, Hidetoshi*; Kahl, D.*; Hayakawa, Seiya*; Binh, D. N.*; Chen, A. A.*; Chen, J.*; Setoodehnia, K.*; Kajino, Toshitaka*

The level scheme above the proton threshold in $$^{26}$$Si is crucial for evaluating the $$^{25}$$Al(p,$$gamma$$)$$^{26}$$Si stellar reaction, which is important for understanding the astrophysical origin of the long-lived cosmic radioactivity $$^{26}$$Al(T$$_{1/2}$$=7.17$$times$$10$$^{5}$$ y) in the Galaxy. The excited states in $$^{26}$$Si have been studied using an in-beam $$gamma$$-ray spectroscopy technique with the $$^{24}$$Mg($$^{3}$$He,n$$gamma$$)$$^{26}$$Si reaction. The spin-parity of one of the most important states reported recently at 5890.0 keV has been assigned as 0$$^{+}$$ by $$gamma$$-$$gamma$$ angular correlation measurements.

Language

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English

Journal

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European Physical Journal A

Volume

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50

Number

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Pages

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p.136_1 - 136_9

Publication Year/Month

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2014/09

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Paper URL

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https://doi.org/10.1140/epja/i2014-14136-4

DOI for research data

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Keywords

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no keyword

Research Facility

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Press Release

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JAEA R&D Navigator

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Accesses

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- Accesses

InCites™

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Percentile:65.75

Category:Physics, Nuclear

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