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Synthesis of hexagonal boron carbonitride without nitrogen void defects

窒素空孔欠陥のない六方晶ホウ素-炭素-窒素化合物の合成

Mannan, M. A.*; 馬場 祐治  ; 木田 徹也*; 永野 正光*; 野口 英行*

Mannan, M. A.*; Baba, Yuji; Kida, Tetsuya*; Nagano, Masamitsu*; Noguchi, Hideyuki*

蜂の巣状の構造を持つ六方晶ホウ素-炭素-窒素化合物(h-BCN)の合成を試み、その構造を調べた。試料は高周波プラズマ誘起化学蒸着法により作成した。欠陥の少ないきれいな薄膜を合成するため、h-BCNと格子定数の近いダイヤモンドを基板に用いるとともに、蒸着中の基板温度を950$$^{circ}$$Cと高温に保持した。X線光電子分光スペクトル(XPS)測定の結果、合成したh-BCN薄膜の組成は、ホウ素0.31, 炭素0.37, 窒素0.6であった。放射光を用い、ホウ素K吸収端および窒素K吸収端のX線吸収端微細構造(NEXAFS)スペクトルを測定した結果、得られた薄膜は理想的な蜂の巣状の構造を持ち、窒素の欠陥はほとんどないことが明らかとなった。

The synthesis and structure of hexagonal boron carbonitride (h-BCN) film on polycrystalline diamond surface were reported. Polycrystalline diamond and/or diamond-like carbon were first fabricated on Si (100) and then it was used as substrate. The deposition was performed by radio frequency plasma enhanced chemical vapor deposition. In order to reduce the content of nitrogen void defects, the deposition was performed at the high temperature of 950$$^{circ}$$C under the working pressure of 2.6 Pa. The typical sample with atomic composition of B$$_{31}$$C$$_{37}$$N$$_{26}$$O$$_{6}$$ in the h-BCN lattice was characterized by X-ray photoelectron spectroscopy. The fine structure of the film was studied by near-edge X-ray absorption fine structure (NEXAFS) measurements. The B K-edge and N K-edge of NEXAFS spectra revealed that the synthesized h-BCN film has the ideal honeycomb-like BN$$_{3}$$ configuration without nitrogen void defects.

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