Synthesis of hexagonal boron carbonitride without nitrogen void defects

Mannan, M. A.*; Baba, Yuji  ; Kida, Tetsuya*; Nagano, Masamitsu*; Noguchi, Hideyuki*

The synthesis and structure of hexagonal boron carbonitride (h-BCN) film on polycrystalline diamond surface were reported. Polycrystalline diamond and/or diamond-like carbon were first fabricated on Si (100) and then it was used as substrate. The deposition was performed by radio frequency plasma enhanced chemical vapor deposition. In order to reduce the content of nitrogen void defects, the deposition was performed at the high temperature of 950C under the working pressure of 2.6 Pa. The typical sample with atomic composition of BCNO in the h-BCN lattice was characterized by X-ray photoelectron spectroscopy. The fine structure of the film was studied by near-edge X-ray absorption fine structure (NEXAFS) measurements. The B K-edge and N K-edge of NEXAFS spectra revealed that the synthesized h-BCN film has the ideal honeycomb-like BN configuration without nitrogen void defects.