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Enhanced damage buildup in C$$^{+}$$-implanted GaN film studied by a monoenergetic positron beam

Li, X. F.*; Chen, Z. Q.*; Liu, C.*; Zhang, H.; Kawasuso, Atsuo

Vacancy-type defects in C$$^{+}$$-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter indicates introduction of arge vacancy clusters. Post-implantation annealing at temperatures up to 800$$^{circ}$$C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000$$^{circ}$$C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C$$^{+}$$-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.

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Category:Physics, Applied

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