Magnetotransport properties of a few-layer graphene-ferromagnetic metal junctions in vertical spin valve devices

縦型スピンバルブ素子を用いた多層グラフェン-磁性金属接合におけるスピン依存伝導に関する研究

圓谷 志郎; 楢本 洋*; 境 誠司

Entani, Shiro; Naramoto, Hiroshi*; Sakai, Seiji

Magnetotransport properties were studied for the vertical spin valve devices with two junctions of permalloy electrodes and a few-layer graphene interlayer. The graphene layer was directly grown on the bottom electrode by chemical vapor deposition. X-ray photoelectron spectroscopy showed that the permalloy surface fully covered with a few-layer graphene is kept free from oxidation and contamination even after dispensing and removing photoresist. This enabled fabrication of the current perpendicular to plane spin valve devices with a well-defined interface between graphene and permalloy. Spin-dependent electron transport measurements revealed a distinct spin valve effect in the devices. The magnetotransport ratio was 0.8% at room temperature and increased to 1.75% at 50 K. Linear current-voltage characteristics and resistance increase with temperature indicated that ohmic contacts are realized at the relevant interfaces.