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Non-destructive chemical depth profiling with X-ray absorption spectroscopy

Yamamoto, Hiroyuki; Nojima, Takehiro; Esaka, Fumitaka  

X-ray photoelectron spectroscopy (XPS) is widely used as a non-destructive chemical state analysis method for solid surface. However, depth profiling is often limited due to insufficient analyzing depth. Ion irradiation is often used for depth profiling of XPS, however, chemical state changes are inevitable. Non-destructive analysis is therefore required. In the present study, we examined a method to perform depth profiling with X-ray absorption spectroscopy (XAS) by changing electron energies for detection ranging from 5 to 50 eV using electron spectrometer. Thin Au films (several nm) deposited on Si(100) substrate are used for the specimen. On the basis of the observed results from XAS spectra, significant increase of Si/Au ratio by reducing electron energy. These results indicate non-destructive chemical depth profiling in XAS can be performed by changing electron energies for detection.

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