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Electronic structure of ThRu$$_{2}$$Si$$_{2}$$ studied by ARPES

角度分解光電子分光によるThRu$$_{2}$$Si$$_{2}$$の電子状態

藤森 伸一   ; 小畠 雅明  ; 竹田 幸治   ; 岡根 哲夫  ; 斎藤 祐児  ; 藤森 淳; 山上 浩志; 松本 裕司*; 山本 悦嗣  ; 立岩 尚之   ; 芳賀 芳範   

Fujimori, Shinichi; Kobata, Masaaki; Takeda, Yukiharu; Okane, Tetsuo; Saito, Yuji; Fujimori, Atsushi; Yamagami, Hiroshi; Matsumoto, Yuji*; Yamamoto, Etsuji; Tateiwa, Naoyuki; Haga, Yoshinori

ThRu$$_{2}$$Si$$_{2}$$2の電子状態について角度分解光電子分光法を用いて研究を行った。ThRu$$_{2}$$Si$$_{2}$$は隠れた秩序転移を示すURu$$_{2}$$Si$$_{2}$$と同じ結晶構造を持つが、5f電子を持たないことからURu$$_{2}$$Si$$_{2}$$におけるU 5f電子状態を理解するための参照系である。ARPESによる測定の結果、ThRu$$_{2}$$Si$$_{2}$$の電子構造は特にEF付近においてURu$$_{2}$$Si$$_{2}$$と大きく異なっていることが明らかとなった。これは、URu$$_{2}$$Si$$_{2}$$において、5f電子がフェルミ準位に寄与し、遍歴的な性質を持っていることを示している。

ThRu$$_{2}$$Si$$_{2}$$ is an isostructural compound of the heavy fermion superconductor URu$$_{2}$$Si$$_{2}$$ which shows the hidden order transition. Since ThRu$$_{2}$$Si$$_{2}$$ does not have 5f electrons, it is a good reference material to understand the contribution of U 5f electrons in the electronic structure of URu$$_{2}$$Si$$_{2}$$. In the present study, we have revealed the band structure and Fermi surface of ThRu$$_{2}$$Si$$_{2}$$ by angle resolved photoelectron spectroscopy (ARPES) using soft X-rays (hn = 600-800 eV). The experimentally obtained band structure and Fermi surface are compared with those of URu$$_{2}$$Si$$_{2}$$ as well as the result of the band structure calculation. We have found that the states in the vicinity of EF are very different in ThRu$$_{2}$$Si$$_{2}$$ and URu$$_{2}$$Si$$_{2}$$, suggesting that U 5f electrons form itinerant bands in URu$$_{2}$$Si$$_{2}$$. The details of the electronic structure of ThRu$$_{2}$$Si$$_{2}$$ and the contributions from U 5f electrons in the band structure and Fermi surface of URu$$_{2}$$Si$$_{2}$$ are discussed.

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