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Strain-induced reaction kinetics of O$$_{2}$$ molecule at SiO$$_{2}$$/Si interfaces studied by real-time X-ray photoelectron spectroscopy

Tang, J.*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Takakuwa, Yuji*

The reaction kinetics of O$$_{2}$$ molecule at SiO$$_{2}$$/Si interfaces were investigated as a function of O$$_{2}$$ pressure (PO$$_{2}$$) by real-time X-ray photoelectron spectroscopy at BL23SU, SPring-8, to monitor the interfacial oxide growth rate (Rint), the oxidation states (Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$ and Si$$^{4+}$$, and the magnitude of oxidation-induced strain (Si$$^{alpha}$$ and Si$$^{beta}$$) at the same time during oxidation. When increasing PO$$_{2}$$ after the surface oxidation, Rint showed a nonlinear power-low function of (PO$$_{2}$$)$$^{n}$$, where n was almost the same as 0.5 for both Si(111) and Si(001) substrates. The results are interpreted by a Si oxidation model, in which the defect generated by the oxidation-induced strain is an active site for dissociative adsorption of O$$_{2}$$ at SiO$$_{2}$$/Si interface. Furthermore, when increasing PO$$_{2}$$ during the surface oxidation, Si$$^{alpha}$$ and Si$$^{beta}$$ showed significant changes at the start of interfacial oxidation.

Language

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English

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Meeting title

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10th International Symposium on Atomic Level Characterisations for New Materials and Devices '15 (ALC '15)

Held date

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2015/10

Location (city)

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Matsue

Location (country)

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Japan

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DOI for research data

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Keywords

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放射光光電子分光; 表面酸化; リアルタイム観察; ナノテクノロジー

Research Facility

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SPring-8(大型放射光施設)

Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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Accesses

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- Accesses

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