Real-time observation of crystallographic tilting InGaAs layers on GaAs offcut substrates

Nishi, Toshiaki*; Sasaki, Takuo; Ikeda, Kazuma*; Suzuki, Hidetoshi*; Takahashi, Masamitsu; Shimomura, Kenichi*; Kojima, Nobuaki*; Oshita, Yoshio*; Yamaguchi, Masafumi*

X-ray reciprocal space mapping during In $_{x}$ Ga $_{1-x}$ As/GaAs(001) MBE growth is performed to investigate effects of substrate misorientations on crystallographic tilting. It was found that evolution of the crystallographic tilt for the InGaAs films is strongly dependent on both layer structures and substrate misorientations. We discuss these observations in terms of an asymmetric distribution of dislocations.

Language	:	English
Journal	:	AIP Conference Proceedings 1556
Volume	:
Number	:
Pages	:	p.14 - 17
Publication Year/Month	:	2013/09
Meeting title	:	9th International Conference on Concentrator Photovoltaic Systems (CPV-9)
Held date	:	2013/04
Location (city)	:	Miyazaki
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1063/1.4822188
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
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Registration No. : BB20151133
JAEA Abstracts No. : 43001212
Paper Submission No. : 16310

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