In situ X-ray study on polytypism of Au-seeded GaAs nanowires grown by MBE

Takahashi, Masamitsu; Kozu, Miwa*; Sasaki, Takuo

The molecular-beam epitaxial growth of Au-seeded GaAs nanowires was investigated by in situ X-ray diffraction. The nanowire growth started with the formation of zincblende (ZB), followed by the growth of wurtzite (WZ). Comparison of measured XRD profiles with the simulation based on a layer-by-layer nucleation model has shown that the transition from ZB to WZ growth is ascribable to the change of local growth conditions related to the shape of triple phase line, where the liquid AuGa droplet, solid GaAs crystal and molecular beam flux meet. The structural change of the catalyst droplets was confirmed by in situ grazing-incidence small angle X-ray scattering.

Language	:	English
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Meeting title	:	5th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (Semicon Nano 2015)
Held date	:	2015/09
Location (city)	:	Hsinchu
Location (country)	:	Taiwan
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : BB20151173
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