Si crystals with XAS and XPSYamamoto, Hiroyuki; Nojima, Takehiro; Esaka, Fumitaka 
In order to develop silicon-based electronic devices, metal silicides are widely studied. Information of the surface chemical states of metal silicides is important to obtain homo-epitaxial films with excellent quality. In this work, depth analysis of surface chemical states of MgSi crystals is carried by XPS. Depth analysis is also performed in XAS measurement with a partial electron yield (PEY) mode. The Si 1s XPS spectra of the cleaved surface of the MgSi crystal indicates that SiO is formed on the surface of the MgSi crystal. Here, no peak assigned to SiO structure is observed. The Si K-edge XAS spectra obtained with the PEY mode show a peak at 1843.7 eV, which can be assigned to SiO structure.
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: | P. 112 |
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: | 2015/00 |
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