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Depth analysis of the surface of Mg$$_{2}$$Si crystals with XAS and XPS

Yamamoto, Hiroyuki; Nojima, Takehiro; Esaka, Fumitaka 

In order to develop silicon-based electronic devices, metal silicides are widely studied. Information of the surface chemical states of metal silicides is important to obtain homo-epitaxial films with excellent quality. In this work, depth analysis of surface chemical states of Mg$$_{2}$$Si crystals is carried by XPS. Depth analysis is also performed in XAS measurement with a partial electron yield (PEY) mode. The Si 1s XPS spectra of the cleaved surface of the Mg$$_{2}$$Si crystal indicates that SiO is formed on the surface of the Mg$$_{2}$$Si crystal. Here, no peak assigned to SiO$$_{2}$$ structure is observed. The Si K-edge XAS spectra obtained with the PEY mode show a peak at 1843.7 eV, which can be assigned to SiO structure.

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