Refine your search:     
Report No.

A Development of super radiation-hardened power electronics using silicon carbide semiconductors; Toward MGy-class radiation resistivity

Hijikata, Yasuto*; Mitomo, Satoshi*; Matsuda, Takuma*; Murata, Koichi*; Yokoseki, Takashi*; Makino, Takahiro; Takeyama, Akinori; Onoda, Shinobu; Okubo, Shuichi*; Tanaka, Yuki*; Kandori, Mikio*; Yoshie, Toru*; Oshima, Takeshi

In order to develop semiconductor devices with MGy radiation resistivity, we are developing power metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on silicon carbide (SiC) semiconductors. The $$gamma$$-ray irradiation responses of power SiC-MOSFETs were studied under various irradiation temperatures and humidity with various gate-bias conditions. Making comparisons between these responses, the optimum device operating condition and a better device structure were derived and MGy resistivity was achieved. Besides, $$gamma$$-ray irradiation tests for a motor-driver circuits consisting of SiC-MOSFETs were carried out, and as a result, their continuous operation up to 2 MGy was confirmed.



- Accesses





[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.