Growth of single-phase nanostructured ErO thin films on Si (100) by ion beam sputter deposition

Mao, W.*; Fujita, Masaya*; Chikada, Takumi*; Yamaguchi, Kenji; Suzuki, Akihiro*; Terai, Takayuki*; Matsuzaki, Hiroyuki*

Single-phase nanocrystalline thin films of ErO (440) has been first prepared using Si (100) substrates by ion beam sputter deposition at 973 K at a pressure of 10 Pa and - annealing at 1023 K at a pressure of 10 Pa. Er silicides formed during the deposition are eliminated via the annealing, which results in the single phase and the smooth surface of the ErO thin films. The epitaxial relationship between Si (100) and ErO (110) is clarified by X-ray diffraction and reflection high energy electron diffraction.