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Growth of single-phase nanostructured Er$$_2$$O$$_3$$ thin films on Si (100) by ion beam sputter deposition

Mao, W.*; Fujita, Masaya*; Chikada, Takumi*; Yamaguchi, Kenji; Suzuki, Akihiro*; Terai, Takayuki*; Matsuzaki, Hiroyuki*

Single-phase nanocrystalline thin films of Er$$_2$$O$$_3$$ (440) has been first prepared using Si (100) substrates by ion beam sputter deposition at 973 K at a pressure of $$<$$ 10$$^{-5}$$ Pa and $${it in}$$-$${it situ}$$ annealing at 1023 K at a pressure of $$approx$$ 10$$^{-7}$$ Pa. Er silicides formed during the deposition are eliminated via the annealing, which results in the single phase and the smooth surface of the Er$$_2$$O$$_3$$ thin films. The epitaxial relationship between Si (100) and Er$$_2$$O$$_3$$ (110) is clarified by X-ray diffraction and reflection high energy electron diffraction.

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Category:Materials Science, Coatings & Films

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