Oxygen potential representation of (U,Ce)O $_{2 pm x}$

Suzuki, Kiichi ; Murakami, Tatsutoshi ; Hirooka, Shun ; Nelson, A.*; McClellan, K.*; Kato, Masato

The relationship between equilibrium oxygen partial pressure, $P_{rm O2}$ , and deviation from stoichiometric composition, x, was evaluated using a Kroger-Vink diagram. It was found that x was proportional to $P_{rm O2}$ $^{+1/2}$ and $P_{rm O2}$ $^{-1/2}$ near stoichiometry for all compositions. This suggests that intrinsic ionization is dominant near stoichiometry. Also, in the reducing region, x was proportional to $P_{rm O2}$ $^{-1/4}$ for 20 and 30% of Ce, and was proportional to $P_{rm O2}$ $^{-1/6}$ for 5% of Ce. Defect reactions and defect concentrations were evaluated by the relationship between x and $P_{rm O2}$ $^{1/n}$ . Then, the oxygen potential expression was derived using the defect concentrations as functions of O/M ratio, temperature and Ce content. The calculated values reproduced experimental values well.

Language	:	English
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Meeting title	:	15th International IUPAC Conference on High Temperature Materials Chemistry (HTMC-15)
Held date	:	2016/03
Location (city)	:	Orlans
Location (country)	:	France
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Keywords	:	no keyword
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Cooperating Institute	:	Los Alamos National Laboratory

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Registration No. : BB20152517
JAEA Abstracts No. :
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