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セシウムスパッターイオン源を利用した電子付着によるC$$_{60}$$負イオン生成技術の開発

Development of novel technique of negative C$$_{60}$$ ion production by electron attachment using cesium sputter ion source

薄井 絢; 千葉 敦也; 山田 圭介

Usui, Aya; Chiba, Atsuya; Yamada, Keisuke

高崎量子応用研究所では、タンデム加速器を用いた高速(MeV級)クラスターイオンの照射効果に関する研究を加速するために、クラスターイオンの中でも特に大きな照射効果を持つC$$_{60}$$イオンビームの高強度化に取り組んだ。既存のセシウムスパッター型負イオン源(SNICS,米国National Electrostatics Corp.製)を利用し、従来のスパッター方式に変わる新たな負イオン生成法として電子付着による負イオン化機構をこれに組み込んだ。その結果、従来の1,000倍の強度のC$$_{60}$$負イオンを12時間安定に生成することに成功した。本報告書では、従来の生成方法の課題を示し、SNICSの簡便な改造でそれを解決する電子付着方式について詳説する。

In the TIARA (Takasaki Ion Accelerators for Advanced Radiation Application), in order to propel the studies on the swift cluster ions, a novel technique was developed to increase the beam intensity of the fullerene ions which would have a considerably larger irradiation effect than any cluster ions. As a new method of negative ion production, the ionization mechanism by electron attachment was introduced as an alternative to the traditional method with the cesium sputtering to the existing cesium sputter type ion source (SNICS). In consequence, the intensity of the negative C$$_{60}$$ ion beam produced using an existing ion source with a novel technique was increased thousand times as high as those using the previous one for 12 hour operation. In this report, we describe the problems in the traditional ionization method and explain the production technique of the negative C$$_{60}$$ ions ionized via electron attachment process, which solves that only by the minor changes in SNICS.

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