Magnetoresistance and Hall effect of antiferromagnetic uranium compound URhIn

Haga, Yoshinori   ; Matsumoto, Yuji*; Pospisil, J.; Tateiwa, Naoyuki   ; Yamamoto, Etsuji  ; Yamamura, Tomoo*; Fisk, Z.*

Transport characteristics of an antiferromagnetic uranium compound URhIn are studied. The antiferromagnetic transition leads to a formation of a gap on the Fermi surface as demonstrated by a hump in the resistivity behavior as a function of temperature. Hall effect, magnetoresistance and de Haas-van Alphen study consistently demonstrate a small carrier concentration in the antiferromagnetic state suggesting that majority of the Fermi surface vanishes.