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Flux pinning properties in YBCO films with growth-controlled nano-dots and heavy-ion irradiation defects

重イオン照射欠陥と成長制御したナノドットを含有したYBCO薄膜における磁束ピニング特性

末吉 哲郎*; 上滝 哲也*; 浦口 雄世*; 末永 桃太郎*; 牧原 隆博*; 藤吉 孝則*; 石川 法人   

Sueyoshi, Tetsuro*; Kotaki, Tetsuya*; Uraguchi, Yusei*; Suenaga, Momotaro*; Makihara, Takahiro*; Fujiyoshi, Takanori*; Ishikawa, Norito

重イオン照射法により向上した超伝導状態のYBCO薄膜における磁束ピニング特性を、さらに向上させるためにBaSnO$$_{3}$$ナノドットを薄膜内に導入し、その効果を調べた。その結果、ナノドットを導入した場合、単に重イオン照射した試料よりも、特に磁場方向が$$c$$軸方向に近い方向の条件で、顕著な磁束ピニング特性の向上が見られた。重イオン照射欠陥とナノドットを組み合わせることにより、全方位的な磁場方向条件での磁束ピニング特性の向上が達成できる可能性を示すことができた。

In order to clarify the influence of size and spatial distribution of three-dimensional pinning centers (3D-PCs) on hybrid flux pinning, columnar defects (CDs) were installed by using 200 MeV Xe ions along the $$c$$-axis direction into quasi-multilayered films consisting of YBa$$_{2}$$Cu$$_{3}$$Oy layers and pseudo layers of BaSnO$$_{3}$$. The positive effect of the BaSnO$$_{3}$$ doping on the hybrid flux pinning stands out for the critical current density $$J_{rm c}$$ around $$B parallel c$$ in high magnetic field and/or inclined magnetic field off the $$c$$-axis, whereas there is little difference in the $$J_{rm c}$$ at $$B parallel c$$ among the same growth temperature samples for low magnetic field. In the case of the in-plane distributed BaSnO$$_{3}$$ nano-dots, the Jc around $$B parallel ab$$ is remarkably enhanced, whereas there is a detrimental effect on the Jc around $$B parallel c$$. These imply that the tuning of 3D-PCs is one of the keys to improve the $$J_{rm c}$$ at all magnetic field orientations for the hybrid flux pinning.

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パーセンタイル:41.46

分野:Physics, Applied

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