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Report No.

Investigation of thermal oxidation process in low-defect density GaN substrate

Yamada, Takahiro*; Yoshigoe, Akitaka ; Ito, Joyo*; Asahara, Ryohei*; Watanabe, Kenta*; Nozaki, Mikito*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Thermal oxidation process of self-standing GaN (ss-GaN) substrates with low-defect density were investigated by atomic force microscopy and synchrotron radiation photoelectron spectroscopy. ss-GaN sample showed a flat surface morphology without pits which are ascribed to dislocation defects in the measured area (1 $$mu$$mx1 $$mu$$m). Therefore, the preferential formation of Ga-oxides at the pits was not observed by thermal oxidation, and the flat surface morphology was kept in the sample oxidized at 800$$^{circ}$$C (the root-mean-square (RMS) roughness of 0.14 nm). However, the ss-GaN sample oxidized at 900$$^{circ}$$C showed rough surface morphology due to the formation of small Ga-oxide grains (RMS roughness of 0.62 nm). The grains drastically grew at 1000$$^{circ}$$C, resulted in the surface morphology consisting of $$beta$$-Ga$$_{2}$$O$$_{3}$$ crystal.



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