Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si and real-time SR-XPS analysis of its reaction

Hasegawa, Mika*; Yoshigoe, Akitaka ; Sugawara, Kenta*; Suto, Ryota*; Sambonsuge, Shota*; Teraoka, Yuden; Fukidome, Hirokazu*; Suemitsu, Maki*

Low-temperature (1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni layer deposited on a 3C-SiC thin film heteroepitaxially grown on a Si substrate. Angle-resolved, synchrotron-radiation X-ray photoemission spectroscopy (SR-XPS) results show that the stacking order is, from the surface to the bulk, Ni carbides(Ni $_{3}$ C/NiCx)/graphene/Ni/Ni silicides (Ni $_{2}$ Si/NiSi)/3C-SiC/Si. In situ SR-XPS during the graphitization annealing clarified that graphene is formed during the cooling stage. We conclude that Ni silicide and Ni carbide formation play an essential role in the formation of graphene.

Language	:	English
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Meeting title	:	16th International Conference on Silicon Carbide and Related Materials (ICSCRM 2015)
Held date	:	2015/10
Location (city)	:	Giardini Naxos
Location (country)	:	Italy
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Keywords	:	グラフェン; 放射光光電子分光; その場観察
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : BB20161254
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