Synchrotron radiation X-ray photoelectron spectroscopy study of interface reactions in Al/Ti/GaN Ohmic contacts

Nozaki, Mikito*; Yoshigoe, Akitaka ; Ito, Joyo*; Asahara, Ryohei*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Structural changes at Ti/GaN or Al/Ti/GaN interfaces were studied by using synchrotron radiation photoelectron spectroscopy. It was found that the Al capping layer plays an important role for oxygen diffusion barriers. The Al layer also stimulates interfacial reactions via introducing oxygen into Ti layers. We found that this reaction dramatically changes Ti/GaN interface structures.

Language	:	Japanese
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Meeting title	:	先進パワー半導体分科会第2回講演会
Held date	:	2015/11
Location (city)	:	大阪
Location (country)	:	日本
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Keywords	:	GaNパワーデバイス; 放射光光電子分光; 界面反応
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : BB20161255
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