Analysis of electronic states on Si(113) surfaces oxidized by a supersonic seeded molecular beam technique

Tanaka, Kazuma*; Ono, Shinya*; Kodama, Hiraku*; Yoshigoe, Akitaka ; Teraoka, Yuden; Tanaka, Masatoshi*

Deep understanding of structures and electronic states of ultra-thin oxidies grown on surfaces with high-index crystal plane is required for the use of SiO/Si with various surfaces in 3D MOSFET such as Si nanowires. In this study, real time photoelectron spectroscopy analysis on oxidation sates formed at the Si(113) surface was demonstrated by using SUREAS2000 constructed at BL23SU in SPring-8. We used supersonic molecular beams to select the translational energies of oxygen molecule and we found that Si oxidation states can be controlled by incident energies.