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Electronic structure of ThRu$$_2$$Si$$_2$$ studied by angle-resolved photoelectron spectroscopy; Elucidating the contribution of U 5$$f$$ states in URu$$_{2}$$Si$$_{2}$$

Fujimori, Shinichi  ; Kobata, Masaaki ; Takeda, Yukiharu  ; Okane, Tetsuo ; Saito, Yuji ; Fujimori, Atsushi; Yamagami, Hiroshi; Matsumoto, Yuji*; Yamamoto, Etsuji ; Tateiwa, Naoyuki  ; Haga, Yoshinori 

The Fermi surface and band structure of $$mathrm{ThRu}_2mathrm{Si}_2$$ have been studied by angle resolved photoelectron spectroscopy (ARPES) with the incident photon energies of $$hnu$$ = 665-735 eV. Detailed band structure and the three-dimensional shape of the Fermi surface were derived experimentally, and they are quantitatively explained by the band-structure calculation based on the density functional approximation. Comparison of the experimental ARPES spectra of $$mathrm{ThRu}_2mathrm{Si}_2$$ with those of $$mathrm{URu}_2mathrm{Si}_2$$ shows that they have considerably different spectral profiles particularly in the energy range of $$E_mathrm{B} = E_mathrm{F}$$ - 1 eV. Some energy bands with their energy dispersions of about 1 eV observed in $$mathrm{URu}_2mathrm{Si}_2$$ are missing in the ARPES spectra of $$mathrm{ThRu}_2mathrm{Si}_2$$ measured along the same high symmetry line of Brillouin zone, suggesting that U 5$$f$$ states form these bands in $$mathrm{URu}_2mathrm{Si}_2$$. The relationship between the ARPES spectra of $$mathrm{URu}_2mathrm{Si}_2$$ and $$mathrm{ThRu}_2mathrm{Si}_2$$ is very different from the case between $$mathrm{CeRu}_2mathrm{Si}_2$$ and $$mathrm{LaRu}_2mathrm{Si}_2$$ where their intrinsic difference is limited only in the very vicinity of the Fermi energy. The present result argues that the U 5$$f$$ electrons in $$mathrm{URu}_2mathrm{Si}_2$$ have strong hybridization with ligand states, and essentially have an itinerant character.

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Category:Materials Science, Multidisciplinary

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