Morphology observation of image crystal by STEM and the prospect of the investigation

Serizawa, Hiroyuki  ; Kaji, Yoshiyuki  ; Yamamoto, Shunya*; Yasunaga, Kazushi*; Oishi, Yuji*; Yamanaka, Shinsuke*

Pieces of CeO(100) thin film were heat treated at 1273 K for 2h. The films were irradiated with 130-keV He ions from 400-keV ion implanter of TIARA. The ion doped film was heat treated at 1773 K for 2h in air. The sample for STEM analysis was prepared by FIB. It was found that many blisters are formed on the surface of the thin film. The idea of gas-driven blister growth on a metal surface was first proposed by Evans et al.. So, the blisters are considered to be formed by gas babble formed accompanied by precipitation of He just under the surface. Many gas babbles are formed in the thin film. The size of the gas bubble falls within the range 30-100 nm. The shape of the gas bubble is truncated octahedron but clearly different from that of void, which mean, the existence of He in the gas bubble effect on the shape of the gas bubble.