Development of CdTe pixel detectors combined with an aluminum Schottky diode sensor and photon-counting ASICs

Toyokawa, Hidenori*; Saji, Choji*; Kawase, Morihiro*; Wu, S.*; Hurukawa, Yukihito*; Kajiwara, Kentaro*; Sato, Masugu*; Hirono, Toko*; Shiro, Ayumi*; Shobu, Takahisa  ; Suenega, Atsushi*; Ikeda, Hirokazu*

We have been developing CdTe pixel detectors combined with a Schottky diode sensor and photon-counting ASICs. The hybrid pixel detector was designed with a pixel size of 200 micro-meter by 200 micro-meter and an area of 19 mm by 20 mm or 38.2 mm by 40.2 mm. The photon-counting ASIC, SP8-04F10K, has a preamplifier, a shaper, 3-level window-type discriminators and a 24-bits counter in each pixel. The single-chip detector with 100 by 95 pixels successfully operated with a photon-counting mode selecting X-ray energy with the window comparator and stable operation was realized at 20C. We have performed a feasibility study for a white X-ray microbeam experiment. Laue diffraction patterns were measured during the scan of the irradiated position in a silicon steel sample. The grain boundaries were identified by using the differentials between adjacent images at each position.