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New p- and n-type ferromagnetic semiconductors; Cr-doped BaZn$$_{2}$$As$$_{2}$$

Gu, B.; Maekawa, Sadamichi

We find new ferromagnetic semiconductors, Cr-doped BaZn$$_{2}$$As$$_{2}$$, by employing a combined method of the density functional theory and the quantum Monte Carlo simulation. Due to a narrow band gap of 0.2 eV in host BaZn$$_{2}$$As$$_{2}$$ and the different hybridization of 3d orbitals of Cr impurity, the impurity bound states have been induced both below the top of valence band and above the bottom of conduction band. The long-range ferromagnetic coupling between Cr impurities is obtained with both p- and n-type carriers.

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English

Journal

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AIP Advances (Internet)

Volume

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7

Number

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5

Pages

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p.055805_1 - 055805_6

Publication Year/Month

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2017/05

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Patent information

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Paper URL

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https://doi.org/10.1063/1.4973208

DOI for research data

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Keywords

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no keyword

Research Facility

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Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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Accesses

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- Accesses

InCites™

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Percentile:20.18

Category:Nanoscience & Nanotechnology

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