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Improved interface properties of SiO$$_{2}$$/GaN MOS capacitor by interfacial GaOx formation with post-oxidation treatment

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Interface properties of SiO$$_{2}$$/GaN structure with post-oxidation treatment were investigated by synchrotron radiation photoelectron spectroscopy and C-V measurements. High-resolution Ga 2p$$_{3/2}$$ core-level spectra for SiO$$_{2}$$/GaN structure oxidized at 800 degrees showed asymmetric feature with a shoulder at higher binding energies compared to that for wet-cleaned GaN surface. From peak deconvolution of the Ga2p$$_{3/2}$$ spectrum, formation of GaOx layer at the SiO$$_{2}$$/GaN interface was revealed. C-V measurements of the SiO$$_{2}$$/GaOx/GaN MOS capacitor exhibited apparently low frequency dispersion and a small hysteresis of below 50 mV. Moreover, the C-V curves well agreed with an ideal C-V curve. These results indicate that good interface properties were achieved by the interfacial GaOx formation.

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