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Interface engineering of Al based gate insulators in AlGaN/GaN MOS-HFETs

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. Since AlGaN/GaN HFET with Schottky gate is restricted in device application due to large gate leakage current and normally-on operation, MOS gate stack with deposited gate insulator has been widely investigated to overcome these limitations. Among various insulating materials, Al$$_{2}$$O$$_{3}$$ is one of the potential candidates because of its wide bandgap and high thermal stability. In this study, we systematically investigated the interface reaction between Al-based dielectrics (Al$$_{2}$$O$$_{3}$$ and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.



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