Development of a new power supply for the RCS kicker magnet with the LTD circuit of SiC-MOSFETs

Takayanagi, Tomohiro   ; Kinsho, Michikazu  ; Yamamoto, Kazami   ; Ueno, Tomoaki*; Horino, Koki*; Tokuchi, Akira*; Mushibe, Yoichi*

J-PARC RCS needs updating of equipment after 10 years since the start of operation. Therefore, a pulse power supply applying a next generation semiconductor (SiC-MOSFET) with low switching loss and high breakdown voltage are investigated This supply constructs a serial / parallel multiplexing circuit using a SiC-MOSFET and a plurality of large capacity capacitors with one circuit board (LTD). By using this board as a main board and adopting a multistage hierarchical structure, it is possible to satisfy the specifications of the RCS kicker power supply with a voltage of 40 kV, a current of 4 kA and a rectangular wave pulse width of 1500 ns. Moreover, by adding a plurality of correction boards of 40 V and arbitrarily setting the operation trigger of the board, flatness correction is also possible. It was confirmed that the results of the preliminary test with the maximum output of 4 kV / 2 kA by are effective for maintaining stable operation at the RCS high intensity beam output.