Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka ; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (Al $_{2}$ O $_{3}$ and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

Language	:	English
Journal	:	Applied Physics Letters
Volume	:	111
Number	:	4
Pages	:	p.042102_1 - 042102_5
Publication Year/Month	:	2017/07
Meeting title	:
Held date	:
Location (city)	:
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1063/1.4986419
DOI for research data	:
Keywords	:	放射光光電子分光; パワーデバイス; GaN; 界面評価; 界面デザインと制御
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:60.44 Category:Physics, Applied
Altmetrics	:

Registration No. : AA20170242
JAEA Abstracts No. : 46000232
Paper Submission No. : 19850

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.