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Influence of deposition power and temperature on SiO$$_{2}$$/AlGaN interface property deposited by PECVD

Terashima, Daiki*; Watanabe, Kenta*; Yamada, Takahiro*; Nozaki, Mikito*; Shih, H.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka ; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Impact of input power and substrate temperature of SiO$$_{2}$$ deposition by plasma-enhanced CVD on SiO$$_{2}$$/AlGaN interface was investigated by means of electrical characterization of MOS capacitors. Synchrotron radiation photoemission spectroscopy revealed that Ga oxide component on AlGaN surface increases with increasing input power of PECVD. MOS capacitors with SiO$$_{2}$$ gate insulator deposited at low input power shows relatively better SiO$$_{2}$$/AlGaN interface quality, despite degraded interface quality for the sample with SiO$$_{2}$$ deposited at high input power. These results suggest that AlGaN surface oxidation during oxide deposition should be controlled to obtain good interface property.



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