Negative and positive muon-induced single event upsets in 65-nm UTBB SOI SRAMs

Manabe, Seiya*; Watanabe, Yukinobu*; Liao, W.*; Hashimoto, Masanori*; Nakano, Keita*; Sato, Hikaru*; Kin, Tadahiro*; Abe, Shinichiro   ; Hamada, Koji*; Tampo, Motonobu*; Miyake, Yasuhiro*

Recently, the malfunction of microelectronics caused by secondary cosmic-ray muon is concerned as semiconductor devices become sensitive to radiation. In this study, we have performed muon irradiation testing for 65-nm ultra-thin body and thin buried oxide (UTBB-SOI) SRAMs in the Japan Proton Accelerator Research Complex (J-PARC), in order to investigate dependencies of single event upset (SEU) cross section on incident muon momentum and supply voltage. It was found that the SEU cross section by negative muon are approximately two to four times larger than those by positive muon in the momentum range from 35 MeV/c to 39 MeV/c. The supply voltage dependence of muon-induced SEU cross section was measured with the momentum of 38 MeV/c. SEU cross sections decrease with increasing supply voltage, but the decreasing of SEU cross section by negative muon is gentler than that by positive muon. Experimental data of positive and negative muon irradiation with the momentum of 38 MeV/c were analyzed by PHITS. It was clarified that the negative muon capture causes the difference between the SEU cross section by negative muon and that by positive muon.