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Mn$$_{2}$$VAl Heusler alloy thin films; Appearance of antiferromagnetism and exchange bias in a layered structure with Fe

Mn$$_{2}$$VAlホイスラー合金薄膜; 鉄を伴う層状構造における反強磁性の発現と交換バイアス

土屋 朋生*; 小林 亮太*; 窪田 崇秀*; 斉藤 耕太郎*; 小野 寛太*; 大原 高志 ; 中尾 朗子*; 高梨 弘毅*

Tsuchiya, Tomoki*; Kobayashi, Ryota*; Kubota, Takahide*; Saito, Kotaro*; Ono, Kanta*; Ohara, Takashi; Nakao, Akiko*; Takanashi, Koki*

Mn$$_{2}$$VAl Heusler alloy films were epitaxially grown on MgO(100) single-crystal substrates by ultra-high-vacuum magnetron sputtering. A2- and L21-type Mn$$_{2}$$VAl order was controlled by the deposition temperature. A2-type Mn$$_{2}$$VAl films showed no spontaneous magnetization, while L21-type Mn$$_{2}$$VAl films showed ferrimagnetic behaviour with a maximum saturation magnetization of 220 emu/cm$$^{3}$$ at room temperature (RT). An antiferromagnetic reflection was observed with neutron diffraction at RT for an A2-type Mn$$_{2}$$VAl film deposited at 400$$^{circ}$$C. A bilayer sample of the antiferromagnetic A2-type Mn$$_{2}$$VAl and Fe showed an exchange bias of 120 Oe at 10 K.

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パーセンタイル:100

分野:Physics, Applied

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