Measurement of defect-induced electrical resistivity change of tungsten wire at cryogenic temperature using high-energy proton irradiation

Iwamoto, Yosuke   ; Yoshida, Makoto*; Matsuda, Hiroki  ; Meigo, Shinichiro   ; Satoh, Daiki   ; Yashima, Hiroshi*; Yabuuchi, Atsushi*; Kinomura, Atsushi*; Shima, Tatsushi*

To predict the lifetime of target materials in high-energy radiation environments at spallation neutron sources, radiation transport codes such as PHITS are used to calculate the displacements per atom (DPA) value. In this work, to validate calculated DPA values of tungsten, we implemented 0.25-mm-diameter wire sample of tungsten in a proton irradiation device with a Gifford-McMahon cryocooler and measured the defect-induced electrical resistivity changes related to the displacement cross section using 389-MeV protons at 10 K. In comparison with experimental data under 1.1 and 1.9 GeV proton irradiation, we found that damage rate of tungsten increases with proton energy due to increase the number of secondary particle s produced by nuclear reactions.