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Report No.
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Development of solid-state switch for power supply with SiC-MOSFET

Takayanagi, Tomohiro  ; Ueno, Tomoaki*; Horino, Koki*; Yamamoto, Kazami  ; Kinsho, Michikazu 

We will present the development of super high voltage short pulse switch power supply aiming at high performance of 3 GeV synchrotron accelerator pulsed electromagnet power supply. We are developing the switch power supply using SiC-MOSFET of the next generation power semiconductor which is higher in breakdown voltage, lower loss, and higher frequency operation than the current mainstream Si power semiconductors. The SiC conversion of semiconductors enables commercialization of thyratron substitute switches and power-saving small size switching power supplies. However, products that satisfy the specification of the thyratron (80kV/4kA) adopted for the J-PARC 3 GeV-RCS kicker power supply with one module have not been developed. Therefore, it is necessary to construct a circuit in which power semiconductors are multiplexed in series and parallel. In addition, the high-speed short pulse waveform required for the kicker power supply is designed with consideration of the circuit impedance such as inductance and stray capacitance separately from the performance improvement of the power semiconductor. Therefore, a circular radially symmetric circuit was constructed in which power semiconductors were concentrically arranged and the impedance of all parallel circuits could be made equal. As a result, waveform distortion caused by the difference in circuit impedance could be suppressed. This structure is adopted in the LTD circuit and it is indispensable for the development of semiconductor new kicker power supply. In this presentation, the results of the preliminary test and the evaluating test are reported.

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