Influence of 30 MHz and 2 MHz RF plasma upon plasma electrode potential in the J-PARC RF-driven H ion source

Shibata, Takanori*; Takagi, Akira*; Shinto, Katsuhiro   ; Ikegami, Kiyoshi*; Okoshi, Kiyonori ; Nammo, Kesao*; Oguri, Hidetomo  ; Naito, Fujio*

For the application of bias voltage in J-PARC Radio Frequency (RF) negative ion source, characteristics of the voltage variation on the plasma electrode are investigated with different RF plasma conditions. A continuous 30 MHz RF power up to 10 - 100 W and a pulsed 2 MHz RF power up to 5 - 20 kW are injected from internal RF antenna coil. In each case, time structure of the voltage between the plasma electrode and the isolated source chamber is measured by voltage probe with different measurement resistances. Behavior of the measured voltage differs strongly whether the RF plasma is in the E mode phase by 30 MHz RF injection or in the H mode phase by 2 MHz RF injection. The results suggest that formation of capacitively coupled electric field and inductively coupled magnetic field decide the positive and the negative fluxes coming into the chamber wall. Under the same plasma condition as in the J-PARC user operation, peak value of the voltage between the source chamber and the plasma electrode is around 60 - 80 V and frequency of the voltage is a combination of 2 MHz and 30 MHz. For the continuous bias voltage application on the plasma electrode, additional distributed constant circuit to cancel these voltage oscillation and high voltage bias power supply are required.