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Anisotropic reconstructed silicon (110)-"16$$times$$2" surface

異方的なSi(110)-"16$$times$$2"再構成表面

朝岡 秀人

Asaoka, Hidehito

Control of low dimensional nanostructures on semiconductor surfaces is one of the most attractive studies. Among the semiconductor surfaces, a reconstructed Si(110)-"16$$times$$2" is a promising template for nanostructure, because of its one dimensional up-and-down terrace of 2.5 nm width. We succeeded in preparation of ordered Si, Ge(110)-"16$$times$$2" single-domain surfaces. One-dimensional structures with C$$_{60}$$ molecules and Si, Ge nanodot formed on the surfaces. Furthermore, we determined the initial oxidation and the oxide layer decomposition process on reconstructed Si(110)-"16$$times$$2" surface.

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