Simultaneous observation of Si oxidation rate and oxidation-induced strain using XPS

Ogawa, Shuichi*; Yoshigoe, Akitaka ; Takakuwa, Yuji*

Thermal oxidation of Si substrate is an indispensable process for the Si device fabrication. However, the influence of oxidation induced strain cannot be ignored for thin films. Synchrotron radiation real-time photoelectron spectroscopy was used as a method to measure simultaneously oxidation induced strain and oxidation rate. It was found that the acceleration of interfacial oxidation induced by thermal strain was observed for the rapid thermal oxidation. The results can be explained by the model in which point defects caused by strain become reaction sites at the SiO/Si interface.