A Radiation-hardened CMOS image sensor with pixels exhibiting a negligibly small dark-level increase during ionizing radiation

Watanabe, Takashi*; Takeuchi, Tomoaki   ; Ozawa, Osamu*; Komanome, Hirohisa*; Akahori, Tomoyuki*; Tsuchiya, Kunihiko 

Radiation hard image sensors have been developed past decades. Almost papers discussed properties before and after radiation but images during radiation were not described yet. We have developed a new type of rad-hard pixel and integrated to 1.3M-pixel, 18-bit digital CMOS image sensor. Pixel area consists of several types of variation and the sensor has been analyzed during gamma ray radiation higher than 1 kGy/h up to 200 kGy. As the result, one type of pixel showed almost zero dark current increase at whole period. On the contrary, it was found organic color filters degraded even at 10 kGy.