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Report No.

Kicker power supply for J-PARC 3-GeV RCS with SiC-MOSFET

Takayanagi, Tomohiro  ; Ono, Ayato; Ueno, Tomoaki*; Horino, Koki*; Togashi, Tomohito; Yamamoto, Kazami  ; Kinsho, Michikazu ; Koizumi, Isao*; Kawamata, Shunsuke*

We are developing a new kicker power supply for J-PARC 3-GeV RCS (Rapid-Cycling Synchrotron) using the next generation power semiconductor SiC-MOSFET with high withstand voltage, low loss, and superior high frequency characteristics. The three major circuits adopted for the RCS kicker power supply, the thyratron switch, the PFN circuit of coaxial cable type, and the end clipper for reflection wave absorption, has been realized with a single modular circuit board based on the LTD circuit. The new kicker power supply realizes stable operation, miniaturization and energy saving by using power semiconductors. The required high voltage can be output by stacking the 800V/2kA modular circuit board in series. The details of circuit design and the results of achieving an output of half 20kV/2kA against the target specification of 40kV/2kA are presented here.



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