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Report No.
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EBSD analysis of strain distribution of sapphire single crystal irradiated with swift heavy ions

Ishikawa, Norito   ; Kondo, Keietsu  ; Fujimura, Yuki; Kitamura, Akane

Radiation damages are induced by swift heavy ions with energy above 1 MeV/u where the energy deposition is mainly done through ionization and electronic excitation process. The previous studies of X-ray diffraction and transmission electron microscopy show that lattice expansion is induced at low fluence, and at high fluence amorphization was induced in single crystalline Al$$_{2}$$O$$_{3}$$ irradiated with swift heavy ions (e.g. amorphization by irradiation with 160 MeV Xe ions at 3.5$$times$$10$$^{14}$$ ions/cm$$^{2}$$). Since the origin of the amorphization is still unclear, it is important to examine the irradiation-induced lattice expansion in detail.

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