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Report No.

Initial oxidation kinetics of Si(113)-(3$$times$$2) investigated using supersonic seeded molecular beams

Ono, Shinya*; Tanaka, Kazuma*; Kodama, Hiraku*; Tanaka, Masatoshi*; Yoshigoe, Akitaka ; Teraoka, Yuden*

The initial oxidation on silicon surfaces with (113) orientation has been investigated by high-resolution photoelectron spectroscopy with synchrotron radiation. In the present study, we investigated both the Si2p state and O1s state to evaluate the oxide thickness, composition, and to assess the strain at the SiO$$_{2}$$/Si interface. In the Si2p state, the oxidized components (Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$, Si$$^{4+}$$) were analyzed. In the O1s state, a low-binding-energy component (LBC) and a high-binding-energy component (HBC) were analyzed. To investigate the non-thermal oxidation process, we utilized the supersonic seeded molecular beam (SSMB) to enhance the translational kinetic energies ($$E_{rm t}$$) of oxygen molecules. We demonstrate that the oxide quality and oxidation kinetics are largely altered by changing $$E_{rm t}$$.



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Category:Chemistry, Physical



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