Roles of strain and carrier in silicon oxidation

Ogawa, Shuichi*; Yoshigoe, Akitaka ; Tang, J.*; Sekihata, Yuki*; Takakuwa, Yuji*

In this paper, we review the study of the unified Si oxidation reaction model mediated by point defect generation, in which O dissociative adsorption occurs at dangling bonds of point defects (emitted Si atoms and vacancies) at the SiO/Si interface, and the point defect generation rate is given by a combination of oxidation-induced strain, thermal strain due to the difference in thermal expansion coefficient between Si and SiO, thermal excitation of Si emission rate, and heat of adsorption.