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Report No.

Vacancy-type defects in garnet crystals revealed by gamma-ray-induced positron annihilation spectroscopy

Kitaura, Mamoru*; Fujimori, Kosuke*; Taira, Yoshitaka*; Fujimoto, Masaki*; Zen, H.*; Hirade, Tetsuya  ; Kamada, Kei*; Watanabe, Shinta*; Onishi, Akimasa*

Positron annihilation spectroscopy is the only way to investigate the properties of cation vacancies because they are negatively charged. We generated high-energy pulsed gamma rays by the vertical collision of an ultrashort pulse laser and electron beam. In this study, we investigated the vacancy-type defects present in the crystals of GAGG(Gd$$_{3}$$Al$$_{2}$$Ga$$_{3}$$O$$_{12}$$), GAGG: Ce and GAGG: Ce, Mg by positron annihilation lifetime spectroscopy using the high-energy gamma rays. The lifetime of the defect-related component was significantly changed by Mg co-doping. This was understood by considering aggregates of Mg$$^{2+}$$ ions at Al/Ga sites with oxygen vacancies, which resulted in the formation of vacancy clusters.



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