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Origin of phosphorescence in Ce:Gd$$_{3}$$Al$$_{2}$$Ga$$_{3}$$O$$_{12}$$ crystals revealed by gamma-ray induced positron annihilation lifetime spectroscopy

Fujimori, Kosuke*; Kitaura, Mamoru*; Taira, Yoshitaka*; Fujimoto, Masaki*; Zen, H.*; Hirade, Tetsuya  ; Kamada, Kei*; Watanabe, Shinta*; Onishi, Akimasa*

We generated high-energy pulsed gamma rays by the vertical collision of an ultrashort pulse laser and electron beam. In this study, we investigated the vacancy-type defects present in the crystals of GAGG(Gd$$_{3}$$Al$$_{2}$$Ga$$_{3}$$O$$_{12}$$), GAGG: Ce and GAGG: Ce, Mg by positron annihilation lifetime spectroscopy using the high-energy gamma rays. The lifetime of the defect-related component was significantly changed by Mg co-doping. This indicates that the Al/Ga vacancies disappear. This fact corresponds well with the suppression of the phosphorescence component and is an important result showing that the Mg co-doping is effective in suppressing the shallow electron capture center.



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