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Chemical-pressure-induced point defects enable low thermal conductivity for Mg$$_{2}$$Sn and Mg$$_{2}$$Si single crystals

化学圧力誘起点欠陥によるMg$$_{2}$$SnおよびMg$$_{2}$$Si単結晶の低熱伝導率化

齋藤 亘*; 林 慶*; Huang, Z.*; 杉本 和哉*; 大山 研司*; 八方 直久*; 原田 正英   ; 及川 健一   ; 稲村 泰弘  ; 林 好一*; 宮崎 孝道*; 宮崎 譲*

Saito, Wataru*; Hayashi, Kei*; Huang, Z.*; Sugimoto, Kazuya*; Oyama, Kenji*; Happo, Naohisa*; Harada, Masahide; Oikawa, Kenichi; Inamura, Yasuhiro; Hayashi, Koichi*; Miyazaki, Takamichi*; Miyazaki, Yuzuru*

The development of thermoelectric (TE) materials, which can directly convert waste heat into electricity, is vital to reduce the use of fossil fuels. Mg$$_{2}$$Sn and Mg$$_{2}$$Si are promising TE materials because of their superior TE performance. In this study, for future improvement of the TE performance, point defect engineering was applied to the Mg$$_{2}$$Sn and Mg$$_{2}$$Si single crystals (SCs) via boron (B) doping. Their crystal structures were analyzed via white neutron holography and SC X-ray diffraction. Moreover, nanostructures and TE properties of the B-doped Mg$$_{2}$$Sn and Mg$$_{2}$$Si SCs were investigated. The B-doping increased the chemical pressure on the Mg$$_{2}$$Sn and Mg$$_{2}$$Si SCs, leading to induce vacancy defects as a point defect. No apparent change was observed in electronic transport, but thermal transport was significantly prevented. This study demonstrates that the vacancy defects can be controlled by the chemical pressure, and can aid in achieving a high TE performance for the Mg$$_{2}$$Sn and Mg$$_{2}$$Si SCs.

発表言語

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English

掲載資料名

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ACS Applied Energy Materials (Internet)

巻

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4

号

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5

ページ数

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p.5123 - 5131

発行年月

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2021/05

発表会議名

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開催年月

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開催都市

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開催国

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キーワード

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no keyword

特許データ

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PDF

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論文URL

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https://doi.org/10.1021/acsaem.1c00670

研究データの公開先DOI

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本成果にかかわる研究データのリンクです。

使用施設

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J-PARC物質・生命科学実験施設  

広報プレスリリース

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化学的圧力で単結晶の欠陥を制御して最低熱伝導率を達成; 中性子ホログラフィーでマグネシウム錫化合物にドープしたホウ素の役割を解明

論文解説記事
(成果普及情報誌)

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受委託・共同研究相手機関

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Access

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- Accesses

InCites™

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パーセンタイル：59.22

分野：Chemistry, Physical

Altmetrics

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