Synchrotron radiation photoemission study on the oxidation on Ge(110) surface at room temperature

Tsuda, Yasutaka   ; Sakamoto, Tetsuya; Yoshigoe, Akitaka 

Germanium (Ge) is an important alternative channel material for metal oxide semiconductor field effect transistors (MOSFETs) due to its high carrier mobility. An atomically controlled insulator/Ge interface is essential to improve MOSFET performance. Therefore, it is necessary to understand and control the oxidation process of the Ge surface at the atomic level. On the other hand, the understanding of the oxidation process on the Ge surface is not sufficiently advanced compared to that of silicon (Si), a widely used semiconductor. In this study, we investigated the oxidation process of Ge(110), which is an important low index surface, aiming at a unified understanding of Ge surface oxidation. The oxidation process of Ge(110) was measured by using synchrotron radiation X ray photoemission spectroscopy and compared with that of Ge(100) and Ge(111).