Temperature dependence of current-induced effective magnetic field acting on domain wall in SrRuO

Sakai, Takaki*; Yamanouchi, Michihiko*; Araki, Yasufumi   ; Uemura, Tetsuya*; Ota, Hiromichi*; Ieda, Junichi   

Current-induced domain wall (DW) motion is one of schemes for electrical manipulation of magnetization direction in spintronics devices. Current density required for the DW motion in a ferromagnetic oxide SrRuO (SRO) is 1-2 orders of magnitude lower than that in ferromagnetic metals, and we have shown that the applied current acts as an effective magnetic field Heff on the DW in SRO. To elucidate the origin of the Heff, we investigated Heff in wide temperature range. The ratio of Heff acting on the DW to current increases with decreasing temperature around the ferromagnetic transition temperature, whereas it shows nonmonotonic temperature dependence at low temperatures. Since SRO has many Weyl points near Fermi level and transverse resistance shows nonmonotonic temperature dependence originating from Berry curvature arising from Weyl points, Weyl fermions can affect the DW motion.