Refine your search�ソスF     
Report No.

Calculation of displacement damage dose of semiconductors using PHITS code

Iwamoto, Yosuke   

In the space environment, radiation irradiate the semiconductors of the devices, and the atomic displacement caused by these radiation degrades the electrical performance of the devices. The atomic displacement of the semiconductor is proportional to the displacement damage (DDD), which is expressed by the non-ionizing energy loss (NIEL). In order to calculate the DDD of semiconductors for various radiation in space, we have developed a method for calculating the DDD in the PHITS code. When silicon was irradiated with protons, neutrons, and electrons, the results of the NIEL calculations by PHITS agreed with the numerical data obtained by the NIEL computer for semiconductors. The defect production efficiencies obtained from the recent molecular dynamic simulations for SiC, InAs, GaAs, and GaN semiconductors were also implemented in PHITS. The results show that GaAs is the most sensitive to displacement damage and SiC is the most resistant to damage when irradiated with 10 MeV protons.



- Accesses





[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.