Development of electron track structure simulation code for evaluating the radiation effect on Si material

Hirata, Yuho   ; Kai, Takeshi   ; Ogawa, Tatsuhiko   ; Matsuya, Yusuke  ; Sato, Tatsuhiko   

The pulse-height defect in the heavy-ions measurement by the Si semiconductor detector is a problem of accurate measurement. Besides, soft errors that cause malfunctions of electronic devices are caused by the radiation interaction of Si semiconductor memory. To study the mechanism of these phenomena, we developed an electron track structure simulation code for Si material. In this work, we prepared the cross-sections for the track structure simulation for Si and calculated the energy transfer process of the radiation down to very low energy. The developed simulation code was implemented in PHITS and succeeded in calculating the electron track in Si. The epsilon value that is the energy required to generate an electron carrier, was calculated as 3.62 eV, which corresponds to the experimental value. For future work, we will analyze the pulse-height defect in the Si semiconductor detector using the developed track structure simulation code.